One Cut-Point Phase-Type Distributions in Reliability. An Application to Resistive Random Access Memories

نویسندگان

چکیده

A new probability distribution to study lifetime data in reliability is introduced this paper. This one a first approach non-homogeneous phase-type distribution. It built by considering cut-point the non-negative semi-line of The density function defined and main measures associated, such as function, hazard rate, cumulative rate characteristic are also worked out. class distributions enables us decrease number parameters estimate when inference considered. Additionally, likelihood model maximum likelihood. Several applications Resistive Random Access Memories compare adjustment phase type developed methodology has been computationally implemented R-cran.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Advanced Physical Modeling of SiOx Resistive Random Access Memories

We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects a...

متن کامل

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for nonvolatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. T...

متن کامل

Random fixed point theorems with an application to a random nonlinear integral equation

In this paper, stochastic generalizations of some fixed point for operators satisfying random contractively generalized hybrid and some other contractive condition have been proved. We discuss also the existence of a solution to a nonlinear random integral equation in Banah spaces.

متن کامل

Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories

This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is de ned as an abrupt switching of either the current or the voltage between discrete values as a result of trapping/de-trapping activity. RTN signal properties are deduced exploiting a factorial hidden Markov model (FHMM). The proposed method considers the measured multi-level R...

متن کامل

Test and Reliability of Magnetic Random Access Memories

Magnetic Random Access Memories (MRAMs) are “Spintronics” devices that store data in Magnetic Tunnel Junctions (MTJs) and have high data processing speed, low power consumption and high integration density compared with FLASH memories. Also, MRAM offers relative large Tunnel Magneto Resistance (TMR) at room temperature and it is compatible with Complementary Metal Oxide Semiconductor (CMOS) pro...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Mathematics

سال: 2021

ISSN: ['2227-7390']

DOI: https://doi.org/10.3390/math9212734